pc66 sodimm KMM466S823DT3 rev. 0.1 july 1999 revision history revision 0.0 (july 5, 1999) ? changed trdl from 1clk to 2clk in operating ac parameter. ? skip icc4 value of cl=2 in dc characteristics in datasheet. ? define a new parameter of tdal( 2clk +20ns), last data in to active delay in operating ac parameter. ? eliminated frequency vs.parameter relationship table. ? added notes @operating ac parameter notes : 5. for -0, trdl=1clk and tdal=1clk+20ns is also supported . samsung recommends trdl=2clk and tdal=2clk + 20ns. revision 0.1 (july 29, 1999) ? changed misprinted "detail y" @ package dimensions. ? symbol change notice before after i il input leakage current (inputs) i li input leakage current i il input leakage current (i/o pins) i ol output open @ dc characteristic table i o output open @ dc characteristic table ? test condition in dc characteristic change notice symbol before after i cc2p , i cc3p cke v il (max), t cc = 15ns cke v il (max), t cc = 10ns i cc2n , i cc3n cke 3 v ih (min), cs 3 v ih (min), t cc = 15ns input signals are changed one time during 30ns cke 3 v ih (min), cs 3 v ih (min), t cc = 10ns input signals are changed one time during 20ns i cc4 2 banks activated 4 banks activated
pc66 sodimm KMM466S823DT3 rev. 0.1 july 1999 the samsung KMM466S823DT3 is a 8m bit x 64 synchronous dynamic ram high density memory module. the samsung KMM466S823DT3 consists of eight cmos 8m x 8 bit with 4banks synchronous drams in tsop-ii 400mil package and a 2k eeprom in 8-pin tssop package on a 144-pin glass-epoxy substrate. two 0.1uf decoupling capacitors are mounted on the printed circuit board in parallel for each sdram. the KMM466S823DT3 is a small outline dual in-line memory mod- ule and is intended for mounting into 144-pin edge connector sockets. synchronous design allows precise cycle control with the use of system clock. i/o transactions are possible on every clock cycle. range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications. ? performance range ? burst mode operation ? auto & self refresh capability (4096 cycles/64ms) ? lvttl compatible inputs and outputs ? single 3.3v 0.3v power supply ? mrs cycle with address key programs latency (access from column address) burst length (1, 2, 4, 8 & full page) data scramble (sequential & interleave) ? all inputs are sampled at the positive going edge of the system clock ? serial presence detect with eeprom ? pcb : height (1,050mil) , double sided component part no. max freq. (speed) KMM466S823DT3-g0/f0 66mhz (@ cl=2 & cl=3) feature general description KMM466S823DT3 sdram sodimm 8mx64 sdram sodimm based on 8mx8, 4banks, 4k refresh, 3.3v synchronous drams with spd pin names * these pins are not used in this module. ** these pins should be nc in the system which does not support spd. pin name function a0 ~ a11 address input (multiplexed) ba0 ~ ba1 select bank dq0 ~ dq63 data input/output clk0 ~ clk1 clock input cke0 clock enable input cs0 chip select input ras row address strobe cas column address strobe we write enable dqm0 ~ 7 dqm v dd power supply (3.3v) v ss ground sda serial data i/o scl serial clock du don t use nc no connection pin configurations (front side/back side) pin 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 47 49 front v ss dq0 dq1 dq2 dq3 v dd dq4 dq5 dq6 dq7 v ss dqm0 dqm1 v dd a0 a1 a2 v ss dq8 dq9 dq10 dq11 v dd dq12 dq13 pin 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 back v ss dq32 dq33 dq34 dq35 v dd dq36 dq37 dq38 dq39 v ss dqm4 dqm5 v dd a3 a4 a5 v ss dq40 dq41 dq42 dq43 v dd dq44 dq45 pin 51 53 55 57 59 61 63 65 67 69 71 73 75 77 79 81 83 85 87 89 91 93 front dq14 dq15 v ss nc nc clk0 v dd ras we cs0 * cs1 du v ss nc nc v dd dq16 dq17 dq18 dq19 v ss dq20 pin 52 54 56 58 60 62 64 66 68 70 72 74 76 78 80 82 84 86 88 90 92 94 back dq46 dq47 v ss nc nc cke0 v dd cas *cke1 *a12 *a13 clk1 v ss nc nc v dd dq48 dq49 dq50 dq51 v ss dq52 pin 95 97 99 101 103 105 107 109 111 113 115 117 119 121 123 125 127 129 131 133 135 137 139 141 143 front dq21 dq22 dq23 v dd a6 a8 v ss a9 a10/ap v dd dqm2 dqm3 v ss dq24 dq25 dq26 dq27 v dd dq28 dq29 dq30 dq31 v ss **sda v dd pin 96 98 100 102 104 106 108 110 112 114 116 118 120 122 124 126 128 130 132 134 136 138 140 142 144 back dq53 dq54 dq55 v dd a7 ba0 v ss ba1 a11 v dd dqm6 dqm7 v ss dq56 dq57 dq58 dq59 v dd dq60 dq61 dq62 dq63 v ss **scl v dd samsung electronics co., ltd. reserves the right to change products and specifications without notice. voltage key
pc66 sodimm KMM466S823DT3 rev. 0.1 july 1999 pin configuration description pin name input function clk system clock active on the positive going edge to sample all inputs. cs chip select disables or enables device operation by masking or enabling all inputs except clk, cke and dqm cke clock enable masks system clock to freeze operation from the next clock cycle. cke should be enabled at least one cycle prior to new command. disable input buffers for power down in standby. cke should be enabled 1clk+t ss prior to valid command. a0 ~ a11 address row/column addresses are multiplexed on the same pins. row address : ra0 ~ ra11, column address : ca0 ~ ca8 ba0 ~ ba1 bank select address selects bank to be activated during row address latch time. selects bank for read/write during column address latch time. ras row address strobe latches row addresses on the positive going edge of the clk with ras low. enables row access & precharge. cas column address strobe latches column addresses on the positive going edge of the clk with cas low. enables column access. we write enable enables write operation and row precharge. latches data in starting from cas , we active. dqm0 ~ 7 data input/output mask makes data output hi-z, t shz after the clock and masks the output. blocks data input when dqm active. (byte masking) dq 0 ~ 63 data input/output data inputs/outputs are multiplexed on the same pins. v dd /v ss power supply/ground power and ground for the input buffers and the core logic.
pc66 sodimm KMM466S823DT3 rev. 0.1 july 1999 dq48 dq49 dq50 dq51 dq52 dq53 dq54 dq55 dqm4 functional block diagram cs0 dqm0 dqm1 dq0 dq1 dq2 dq3 dq4 dq5 dq6 dq7 u0 dq0 dq1 dq2 dq3 dq4 dq5 dq6 dq7 dq8 dq9 dq10 dq11 dq12 dq13 dq14 dq15 dqm cs dqm dqm5 dq0 dq1 dq2 dq3 dq4 dq5 dq6 dq7 dq32 dq33 dq34 dq35 dq36 dq37 dq38 dq39 dq40 dq41 dq42 dq43 dq44 dq45 dq46 dq47 dqm dqm dqm6 dqm2 dqm3 dq0 dq1 dq2 dq3 dq4 dq5 dq6 dq7 u2 dq16 dq17 dq18 dq19 dq20 dq21 dq22 dq23 dq24 dq25 dq26 dq27 dq28 dq29 dq30 dq31 dqm cs dqm dqm7 dq0 dq1 dq2 dq3 dq4 dq5 dq6 dq7 dq56 dq57 dq58 dq59 dq60 dq61 dq62 dq63 dqm dqm u1 u3 cs cs u4 cs u6 cs u5 u7 cs cs v dd vss two 0.1uf capacitors per each sdram to all sdrams serial pd sda scl a1 a2 a0 a0 ~ an, ba0 & 1 cke0 ras cas we sdram u0 ~ u7 sdram u0 ~ u7 sdram u0 ~ u7 sdram u0 ~ u7 sdram u0 ~ u7 u0/u4 u1/u5 10 w 10 w clk0/1 u2/u6 u3/u7 dq0 dq1 dq2 dq3 dq4 dq5 dq6 dq7 dq0 dq1 dq2 dq3 dq4 dq5 dq6 dq7 dq0 dq1 dq2 dq3 dq4 dq5 dq6 dq7 dq0 dq1 dq2 dq3 dq4 dq5 dq6 dq7
pc66 sodimm KMM466S823DT3 rev. 0.1 july 1999 absolute maximum ratings parameter symbol value unit voltage on any pin relative to vss v in , v out -1.0 ~ 4.6 v voltage on v dd supply relative to vss v dd , v ddq -1.0 ~ 4.6 v storage temperature t stg -55 ~ +150 c power dissipation p d 8 w short circuit current i os 50 ma permanent device damage may occur if "absolute maximum ratings" are exceeded. functional operation should be restricted to recommended operating condition. exposure to higher than recommended voltage for extended periods of time could affect device reliability. note : dc operating conditions and characteristics recommended operating conditions (voltage referenced to v ss = 0v, t a = 0 to 70 c) parameter symbol min typ max unit note supply voltage v dd 3.0 3.3 3.6 v input high voltage v ih 2.0 3.0 v ddq +0.3 v 1 input low voltage v il -0.3 0 0.8 v 2 output high voltage v oh 2.4 - - v i oh = -2ma output low voltage v ol - - 0.4 v i ol = 2ma input leakage current i li -10 - 10 ua 3 capacitance (v dd = 3.3v, t a = 23 c, f = 1mhz, v ref = 1.4v 200 mv) parameter symbol min max unit input capacitance (a 0 ~ a 11 , ba0 ~ ba1) input capacitance ( ras , cas , we ) input capacitance (cke0) input capacitance (clk0 ~ clk1) input capacitance ( cs0 ) input capacitance (dqm0 ~ dqm7) data input/output capacitance (dq0 ~ dq63) c in1 c in2 c in3 c in4 c in5 c in6 c out 23 23 23 15 25 8 9 40 40 40 21 45 10 12 pf pf pf pf pf pf pf 1. v ih (max) = 5.6v ac.the overshoot voltage duration is 3ns. 2. v il (min) = -2.0v ac. the undershoot voltage duration is 3ns. 3. any input 0v v in v ddq . input leakage currents include hi-z output leakage for all bi-directional buffers with tri-state outputs. notes :
pc66 sodimm KMM466S823DT3 rev. 0.1 july 1999 dc characteristics (recommended operating condition unless otherwise noted, t a = 0 to 70 c) parameter symbol test condition version unit note -0 operating current (one bank active) i cc1 burst length = 1 t rc 3 t rc (min) i o = 0 ma 560 ma 1 precharge standby current in power-down mode i cc2 p cke v il (max), t cc = 10ns 8 ma i cc2 ps cke & clk v il (max), t cc = 8 precharge standby current in non power-down mode i cc2 n cke 3 v ih (min), cs 3 v ih (min), t cc = 10ns input signals are changed one time during 20ns 120 ma i cc2 ns cke 3 v ih (min), clk v il (max), t cc = input signals are stable 48 active standby current in power-down mode i cc3 p cke v il (max), t cc = 10ns 24 ma i cc3 ps cke & clk v il (max), t cc = 24 active standby current in non power-down mode (one bank active) i cc3 n cke 3 v ih (min), cs 3 v ih (min), t cc = 10ns input signals are changed one time during 20ns 200 ma i cc3 ns cke 3 v ih (min), clk v il (max), t cc = input signals are stable 120 ma operating current (burst mode) i cc4 i o = 0 ma page burst 4banks activated t ccd = 2clks 760 ma 1 refresh current i cc5 t rc 3 t rc (min) 1,000 ma 2 self refresh current i cc6 cke 0.2v g 8 ma f 3.2 ma 1. measured with outputs open. 2. refresh period is 64ms. 3. unless otherwise noted, input swing level is cmos(v ih /v il =v ddq /v ssq ) notes :
pc66 sodimm KMM466S823DT3 rev. 0.1 july 1999 3.3v 1200 w 870 w output 50pf v oh (dc) = 2.4v, i oh = -2ma v ol (dc) = 0.4v, i ol = 2ma vtt = .4v 50 w output 50pf z0 = 50 w (fig. 2) ac output load circuit (fig. 1) dc output load circuit ac operating test conditions (v dd = 3.3v 0.3v , t a = 0 to 70 c) parameter value unit ac input levels (vih/vil) 2.4/0.4 v input timing measurement reference level 1.4 v input rise and fall time tr/tf = 1/1 ns output timing measurement reference level 1.4 v output load condition see fig. 2 operating ac parameter (ac operating conditions unless otherwise noted) parameter symbol version unit note -0 row active to row active delay t rrd (min) 20 ns 1 ras to cas delay t rcd (min) 24 ns 1 row precharge time t rp (min) 24 ns 1 row active time t ras (min) 50 ns 1 row cycle time t ras (max) 100 us t rc (min) 80 ns 1 last data in to row precharge t rdl (min) 2 clk 2,5 last data in to active delay t dal (min) 2 clk + 20ns - 5 last data in to new col. address delay t cdl (min) 1 clk 2 last data in to burst stop t bdl (min) 1 clk 2 col. address to col. address delay t ccd (min) 1 clk 3 number of valid output data cas latency=3 2 ea 4 cas latency=2 1 1. the minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then rounding off to the next higher integer. 2. minimum delay is required to complete write. 3. all parts allow every cycle column address change. 4. in case of row precharge interrupt, auto precharge and read burst stop. 5. for -0, trdl=1clk and tdal=1clk+20ns is also supported . samsung recommends trdl=2clk and tdal=2clk + 20ns. notes :
pc66 sodimm KMM466S823DT3 rev. 0.1 july 1999 refer to the individual component, not the whole module. parameter symbol -0 unit note min max clk cycle time cas latency=3 t cc 10 1000 ns 1 cas latency=2 13 clk to valid output delay cas latency=3 t sac 7 ns 1,2 cas latency=2 7 output data hold time cas latency=3 t oh 3 ns 2 cas latency=2 3 clk high pulse width t ch 3.5 ns 3 clk low pulse width t cl 3.5 ns 3 input setup time t ss 2.5 ns 3 input hold time t sh 1.5 ns 3 clk to output in low-z t slz 1 ns 2 clk to output in hi-z cas latency=3 t shz 7 ns cas latency=2 7 1. parameters depend on programmed cas latency. 2. if clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. assumed input rise and fall time (tr & tf) = 1ns. if tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]ns should be added to the parameter. notes : ac characteristics (ac operating conditions unless otherwise noted)
pc66 sodimm KMM466S823DT3 rev. 0.1 july 1999 simplified truth table (v=valid, x=don t care, h=logic high, l=logic low) command cken-1 cken cs ras cas we dqm ba 0,1 a 10 /ap a 11, a 9 ~ a 0 note register mode register set h x l l l l x op code 1,2 refresh auto refresh h h l l l h x x 3 self refresh entry l 3 exit l h l h h h x x 3 h x x x 3 bank active & row addr. h x l l h h x v row address read & column address auto precharge disable h x l h l h x v l column address (a 0 ~ a 8 ) 4 auto precharge enable h 4,5 write & column address auto precharge disable h x l h l l x v l column address (a 0 ~ a 8 ) 4 auto precharge enable h 4,5 burst stop h x l h h l x x 6 precharge bank selection h x l l h l x v l x all banks x h clock suspend or active power down entry h l h x x x x x l v v v exit l h x x x x x precharge power down mode entry h l h x x x x x l h h h exit l h h x x x x l v v v dqm h v x 7 no operation command h x h x x x x x l h h h 1. op code : operand code a 0 ~ a 11 & ba 0 ~ ba 1 : program keys. (@ mrs) 2. mrs can be issued only at all banks precharge state. a new command can be issued after 2 clock cycles of mrs. 3. auto refresh functions are as same as cbr refresh of dram. the automatical precharge without row precharge command is meant by "auto". auto/self refresh can be issued only at all banks precharge state. 4. ba 0 ~ ba 1 : bank select addresses. if both ba 0 and ba 1 are "low" at read, write, row active and precharge, bank a is selected. if both ba 0 is "low" and ba 1 is "high" at read, write, row active and precharge, bank b is selected. if both ba 0 is "high" and ba 1 is "low" at read, write, row active and precharge, bank c is selected. if both ba 0 and ba 1 are "high" at read, write, row active and precharge, bank d is selected. if a 10 /ap is "high" at row precharge, ba 0 and ba 1 is ignored and all banks are selected. 5. during burst read or write with auto precharge, new read/write command can not be issued. another bank read/write command can be issued after the end of burst. new row active of the associated bank can be issued at t rp after the end of burst. 6. burst stop command is valid at every burst length. 7. dqm sampled at positive going edge of a clk and masks the data-in at the very clk (write dqm latency is 0), but makes hi-z state the data-out of 2 clk cycles after. (read dqm latency is 2) notes : x
pc66 sodimm KMM466S823DT3 rev. 0.1 july 1999 package dimensions 2.66 2.50 units : inches (millimeters) 2-r 0.078 min (2.00 min) 0.18 (4.60) 0.91 (23.20) 1.29 (32.80) 0 . 2 4 ( 6 . 0 ) 0.13 0 . 7 9 ( 2 0 . 0 0 ) (3.30) (63.60) (67.60) detail z 0.16 0.0039 (4.00 0.10) 0.06 0.0039 (1.50 0.1) tolerances : .005(.13) unless otherwise specified the used device is 8mx8 sdram, tsop sdram part no. : km48s8030dt 2- f 0.07 (1.80) 1 . 0 5 ( 2 6 . 6 7 ) 0.16 0.039 (4.00 0.10) 0.083 (2.10) 0.10 (2.50) z y 0.15 (3.70) 0.150 max 0.04 0.0039 (1.00 0.10) 0 . 1 2 5 m i n ( 3 . 2 0 m i n ) (3.81 max) 0 . 1 5 7 m i n ( 4 . 0 0 m i n ) 0.03 typ 0.024 0.001 0.008 0.006 (0.200 0.150) (0.600 0. 050) (0.80 typ ) 0 . 1 0 0 m i n ( 2 . 5 4 0 m i n ) detail y
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